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Viviana Mulloni

  • Phone: 0461314496
  • FBK Povo
Short bio

Viviana Mulloni graduated in Chemistry from the University of Padova in 1993. In the same year started her PhD at the Physical Chemistry Department of the same University, working on optical properties of organic charge transfer dimers. In 1997 was at Northwestern University (IL, USA) as a postdoc researcher doing research on photorefractive materials and ultrafast dynamics of charge transfer dimers. At the beginning of 1998 joined the Physics Department of the University of Trento, working on fabrication and optical characterization of porous silicon and nanocrystalline silicon devices. In 2003 started working on MEMS devices at ITC-irst, now FBK, getting involved mainly in RF-MEMS fabrication and characterization, but also on several other devices such as flow sensors, terahertz detectors and antennas and more recently microfluidic devices. Her current research interests include the realization of MEMS and bio-MEMS devices and several selected topics in material science.

Research interests
Microtechnology MEMS Sensors and Actuators RF-MEMS Lab on Chip
  1. L. Pavesi; V. Mulloni,
    Porous Silicon,
    Silicon-based microphotonics: from basics to applications,
    IOS Press,
    , pp. 87 -
  2. Georg Pucker; Viviana Mulloni; L. Pavesi; Pierluigi Bellutti; Alberto Lui; C. Spinella,
    Visible luminescence from a Si superlattice embedded in high quality Si/SiO2 optical microcavities,
    SiO2/Si microcavities were prepared using poly-Si layers, deposited by LPCVD technique and thermally grown SiO2 layers. A superlattice formed by 3 thin light emitting Si-layers (thickness <2nm) separated by SiO2 layers was embedded within the microcavity. Transmission Electron Microscopy, reflection and photoluminescence spectra were used to characterise the microcavities. Reflection measurements show a cavity resonance at 650 nm and at 830 nm, with a quality factor of 65. Comparison with the photoluminescence spectra of (Si/SiO2) superlattices indicates an enhancement of the luminescence intensity by a factor of 20, a narrowing of the emission line to 13 nm and a blueshift of the main spectral features,
  3. L. Pavesi; Z. Gaburro; Viviana Mulloni; C. Mazzoleni; R. Chierchia; Pierluigi Bellutti; Alberto Lui; F. Fuso; M. Labardi; L. Pardi; F. Sbrana; M. Allegrini; S. Trusso; C. Vasi; O. Bisi; S. Ossicini; E. Degoli; A. Diligenti; A. Nannini; G. Pennelli; F. Pieri,
    Development and characterisation of electroluminescent diodes based on porous Si Integration with the control electronics in CMOS technology,
    The demonstration of efficient and reliable light emitting diodes (LED) in a silicon based system will have a great impact on photonics. A first step to this goal is the demonstration of an efficient Si based LED for which porous silicon (PS) is a good candidate. State of the art PS based LED devices have external quantum efficiency of more than 1% even if the power efficiency is still in the order of 0.1% due to the very high turn-on voltage of these diodes, while integration of PS based LED with microelectronic circuit has been also demonstrated. In this project we propose a new device structure based on an heterojunction between crystalline Si and PS. The idea is based on the realisation that efficient hole injection exists. With our device structure we want to mimic this interface also for electron injection. This is obtained through an electrochemical anodization of a p-type silicon wafer where n+-type doped stripes are formed by implantation. Due to the etching selectivity of the PS formation process when performed in the dark, the n+-type doped stripes are not etched and, instead, are floating over the PS layer. The resulting structure is composed of an array of n+-type doped crystalline Si/PS junction. The fabrication of the test structure is within the CMOS fab-line of ITC-irst and it comprehends all standard processing but for the fabrication of the PS layer, which is an electrochemical attak, performed within the Department of Physics of Trento,
  4. L. Pavesi; V. Mulloni,
    All porous silicon microcavities: growth and physics,
    vol. 80,
    n. 1-4,
    , pp. 43 -
  5. D. Pedron; S. Lavina; V. Mulloni; R. Bozio,
    Coupling of charge-transfer transitions to low-wavenumber phonons in quasi-one-dimensional radical ion salts: resonance Raman study of tetraethylammonium-DDQ,
    vol. 29,
    n. 10-11,
    , pp. 907 -
  6. V. Mulloni; D. Pedron; R. Bozio,
    Effects of the mixing of charge transfer and molecular excitations on the resonance Raman properties of symmetric radical dimers,
    vol. 263,
    n. 1-2,
    , pp. 331 -
  7. D. Pedron; A. Speghini; V. Mulloni; R. Bozio,
    Coupling of electrons to intermolecular phonons in molecular charge transfer dimers: A resonance Raman study,
    vol. 103,
    n. 8,
    , pp. 2795 -