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Benno Margesin

  • Phone: 0461314490
  • FBK Povo
Short bio

Benno Margesin was born in Bolzano, Italy, in December 1955. He received the doctor degree in physics, in 1980, from the University of Bologna with a thesis on electron optics applied to the electron microscopy. He joined the Istituto Trentino di Cultura of Trento in 1982 and started his activity as a researcher of the ion implantation group. Within the ion implantation group he was involved in the design and development of heavy ion sources and of electron-optical elements for heavy ion implanter. He joined in 1987 the Integrated Circuits Fabrication Laboratory, now the Microsystem Division (MIS) of ITC-irst, where led the ion implantation and furnace group. Since 1992 he is also involved in the development of sensors and the study of micromechanics. In particular he developed physical and chemical sensors and there fabrication processes, as there are cryogenic microcalorimeter, ISFETs, LAPS, biosensors, pressure sensors, microelectrodes and passive components for microwave circuits, for applications in research and industry. In 1997 he became the leader of the BioMEMS group at ITC-irst (now FBK).His activity on RF MEMS devices dates back to the beginning of the INCO COPERNICUS Project No. 977131 "Micromachined circuits for microwave and millimeter wave applications - MEMSWAVE". where he collaborated in the development of low loss passive RF components. Starting from 2001 his major involvement is in the development of a technology platform for RF switches, first with in the ESA/ESTEC Contract Nr. 14628/NL/CK-MEM Switch as a subcontractor of Alcatel Alenia Space and then within the NoE AMICOM, where he is currently working on the optimization and extension of the RF switch technology platform.In 2006 he becomes the head of the MEMS group of the MIS (MicroSystems) Division at ITC-irst. From January 2008 till December 2008 he lead the MEMSRad Research Unit and from January 2009 till December 2013 he was the head of the MEMS Research Unit in FBK. At present his scientific interest is related to development of RF passive components on silicon (switches), capacitive silicon microphones, bolometres and physical sensors for consumer and industrial applications.
He is co-author of invited talks of national and international conferences. He is also co-inventor of a patent in the field of biomedical devices for the measurement of the metabolic activity of living cells.

Research interests
RFMEMS criogenic bolometers Microfabrication technology microthrusters
  1. L. Colalongo; G. Verzellesi; L. Quarella; D. Passeri; Benno Margesin; C. Ciampolini; M. Rudan,
    Device Level Simulation of Ion-Sensitive FETs,
    Proceedings of the ISSDT Conference,
  2. Cristiana Armaroli; Alberto Lui; Benno Margesin; Vittorio Zanini; Mario Zen; Alfredo Maglione; Giovanni Soncini,
    Sensori ChemFET per il controllo ambientale,
    2° Congresso nazionale sui materiali per Ingegneria - AIMAT 94,
    , pp. 577-
    , (2° Congresso nazionale sui materiali per Ingegneria - AIMAT 94,
    Trento, Italy,
    19/09/1994 - 21/09/1994)
  3. Giovanni Soncini; Alberto Lui; Benno Margesin; Vittorio Zanini; Mario Zen,
    Contratto IRST/Technobiochip. Sensori CHEMFET`s,
  4. Giovanni Soncini; Alberto Lui; Benno Margesin; Vittorio Zanini; Mario Zen,
    Contratto IRST/Technobiochip. Sensori LAPS.,
  5. Diego Bisero; Maurizio Dapor; Benno Margesin,
    X-ray diffraction study of P-doped polycrystalline Si thin films used in ULSI devices,
    vol. 14,
    , pp. 303 -
  6. Benno Margesin; M.C. Vecchi; Mario Zen; Nicola Zorzi; Massimo Rudan,
    Electro-optical characterization of photosensors for solid state imagers,
    ESSDERC `92,
    no publisher,
    , (ESSDERC `92,
    Leuven, Belgio,
    14/09/1992 - 17/09/1992)
  7. Benno Margesin; Roberto Canteri; Sandro Solmi; A. Armigliato; F. Baruffaldi,
    Boron and Antimony Codiffusion in Silicon,
    vol. 6,
    n. 11,
    , pp. 2352 -
  8. L. Guzman; F. Giacomozzi; B. Margesin; L. Calliari; L. Fedrizzi; P. M. Ossi; M. Scotoni,
    Thick and homogeneous surface layers obtained by reactive ion-beam-enhanced deposition,
    vol. 90,
    , pp. 349 -
  9. L. Calliari; F. Giacomozzi; L. Guzman; B. Margesin; P. M. Ossi,
    Ion beam enhanced deposition and dynamic ion mixing for surface modification,
    Martinus Nijhoff Publishers,
    , (Erosion and Growth of Solids Stimulated by Atom and Ion Beams,
    Crete, Greece,
    September 16-27,1985)